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SI1330EDL The Vishay SI1330EDL is an N-Channel MOSFET designed for general-purpose applications. It features a 60V drain-source breakdown voltage and a continuous drain current of 250mA.
Mfr Part #:

SI1330EDL

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI1330EDL is an N-Channel MOSFET designed for general-purpose applications. It features a 60V drain-source breakdown voltage and a continuous drain current of 250mA.
✓ Total Stock: 452,000 pcs
$ Price Range: $2.81

SI1330EDL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
452,000 pcs
On Request
452000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI1330EDL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Style
Power Dissipation
SVHC Present
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SI1330EDL Description

Short technical summary and product information.

The Vishay SI1330EDL is a single N-Channel MOSFET from the Si1 series, housed in a compact SOT-323-3 surface-mount package. This device offers a drain-source breakdown voltage of 60V and a continuous drain current of 250mA, making it suitable for a variety of switching and amplification tasks.

 

Key electrical characteristics include a typical on-resistance of 2.5 Ohms and a gate-source threshold voltage of 1V. The MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation of 310mW. Its typical gate charge is 0.4 nC, contributing to efficient switching performance with typical turn-on delay times of 3.8 ns and turn-off delay times of 12.8 ns.

 

The SI1330EDL is designed for surface-mount (SMD/SMT) applications, utilizing a cut tape packaging method with a standard pack quantity of 3000 units. Its N-Channel enhancement mode operation and TrenchFET technology ensure reliable performance in electronic circuits.

SI1330EDL Quick Information

Product Type: MOSFET
Series: Si1
Canonical Name: SI1330EDL N-Channel MOSFET
Subcategory: N-Channel MOSFET

SI1330EDL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1330EDL Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1330EDL Features

  • N-Channel MOSFET with 60V breakdown voltage.
  • 250mA continuous drain current capability.
  • Low 2.5 Ohm typical on-resistance.
  • Compact SOT-323-3 surface-mount package.
  • Wide operating temperature range of -55°C to +150°C.

SI1330EDL Applications

  • Suitable for general switching applications.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Effective in signal amplification tasks.

SI1330EDL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI1330EDL?

The drain-source breakdown voltage is 60 V.

What is the continuous drain current for the SI1330EDL?

The continuous drain current is 250 mA.

What is the typical on-resistance of the SI1330EDL?

The typical on-resistance is 2.5 Ohms.

What is the gate-source threshold voltage?

The gate-source threshold voltage is 1 V.

What is the operating temperature range for this MOSFET?

The operating temperature range is from -55 C to +150 C.

What package type is the SI1330EDL in?

The package type is SOT-323-3.

How is the SI1330EDL packaged?

It is packaged in Cut Tape.

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