| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1317DL-T1-GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a minimum drain-source breakdown voltage of -20V and a maximum on-resistance of 150mOhm at VGS = -4.5V and ID = 1.4A. The gate-source threshold voltage is 800mV maximum at ID = 250µA, and the maximum gate-source voltage rating is ±8V.
This device is designed for low-voltage switching applications where P-Channel logic-level control is required. The SOT323 package is compact and suitable for surface-mount assembly on standard PCB substrates.
Key electrical characteristics include a drain-source breakdown voltage temperature coefficient of 14 mV/°C and a gate-source threshold voltage temperature coefficient of -2.4 mV/°C, providing predictable performance over temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -20V at VGS = 0V and ID = -250µA.
The maximum on-resistance is 150mOhm at VGS = -4.5V and ID = 1.4A.
The maximum gate-source threshold voltage is 800mV at ID = 250µA.
The maximum gate-source voltage is ±8V.