SI1315DL-T1-GE3 The Vishay Dale SI1315DL-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 900mA. It is housed in a SOT-323 package.
Mfr Part #:

SI1315DL-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1315DL-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 900mA. It is housed in a SOT-323 package.
✓ Total Stock: 2,900 pcs
$ Price Range: $0.99

SI1315DL-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,900 pcs
2900 pcs On Request 1 On Request On Request 14+ On Request On Request

SI1315DL-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1315DL-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1315DL-T1-GE3 is a P-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It features a drain-source voltage (Vds) of 8V and a continuous drain current (Id) of up to 900mA at 25°C case temperature.

 

This MOSFET utilizes TrenchFET power technology, offering low on-resistance. The Rds(on) is specified at a maximum of 336mOhm at 4.5V Vgs and 0.8A Id. The gate-source threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA. Key electrical parameters include a gate charge (Qg) of 3.4nC typical at 4.5V Vgs and an input capacitance (Ciss) of 112pF typical at 4V Vds.

 

Operating within a junction temperature range of -50°C to 150°C, the SI1315DL-T1-GE3 has a maximum power dissipation of 400mW (Tc=25°C) or 300mW (Ta=25°C). It is supplied in a compact SC-70-3 or SOT-323 surface mount package.

 

Environmental compliance includes RoHS3 compliance and Halogen-free status according to IEC 61249-2-21 definition. The ordering information indicates it is a lead (Pb)-free and halogen-free part.

SI1315DL-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si1315DL P-Channel 8V MOSFET
Subcategory: P-Channel

SI1315DL-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1315DL-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1315DL-T1-GE3 Features

  • P-Channel 8V MOSFET
  • 900mA continuous drain current
  • Low Rds(on) of 336mOhm
  • TrenchFET power technology
  • SOT-323 surface mount package

SI1315DL-T1-GE3 Applications

  • Load switch for portable devices
  • DC/DC converters
  • Power management circuits

SI1315DL-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI1315DL-T1-GE3?

The drain-source voltage (Vds) is 8V.

What is the maximum continuous drain current for this MOSFET?

The continuous drain current (Id) is 900mA at 25°C case temperature.

What is the Rds(on) of the SI1315DL-T1-GE3?

The Rds(on) is a maximum of 336mOhm at 4.5V Vgs and 0.8A Id.

What is the operating temperature range?

The operating junction and storage temperature range is -50°C to 150°C.

What package type is the SI1315DL-T1-GE3 supplied in?

It is supplied in a SC-70-3 or SOT-323 surface mount package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI1315DL-T1-GE3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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