SI1305EDL-T1-E3 The Vishay Dale SI1305EDL-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous current of 860mA. It is supplied in a surface-mount SC-70-3 package.
Mfr Part #:

SI1305EDL-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1305EDL-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous current of 860mA. It is supplied in a surface-mount SC-70-3 package.
✓ Total Stock: 723,200 pcs
$ Price Range: $0.99

SI1305EDL-T1-E3 Available from 1 distributor

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SI1305EDL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1305EDL-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1305EDL-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 8V and can handle a continuous drain current of 860mA at 25°C.

 

The MOSFET has a low on-resistance (Rds On) of 280mOhm at 1A and 4.5V, with a gate charge of 4nC at 4.5V. The threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

This device is packaged in an SC-70-3 surface-mount package, making it suitable for compact designs. The power dissipation is rated at 290mW (Ta). It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

Key electrical characteristics include a maximum gate-source voltage of ±8V and drive voltages ranging from 1.8V to 4.5V. The technology used is MOSFET (Metal Oxide).

SI1305EDL-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1305EDL-T1-E3 P-Channel MOSFET
Subcategory: Single

SI1305EDL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1305EDL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1305EDL-T1-E3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Continuous current rating of 860mA at 25°C.
  • Low on-resistance of 280mOhm at 1A, 4.5V.
  • Surface mount SC-70-3 package for compact designs.
  • Operates from -55°C to 150°C junction temperature.

SI1305EDL-T1-E3 Applications

  • Suitable for low-voltage switching applications.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in battery-powered systems.

SI1305EDL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SI1305EDL-T1-E3?

8V.

What package does the SI1305EDL-T1-E3 come in?

Surface-mount SC-70-3 package (also known as SOT-323).

What is the operating temperature range?

-55°C to 150°C (junction).

What is the maximum threshold voltage?

450mV at 250µA drain current.

What is the typical gate charge?

4 nC at Vgs = 4.5V.

What is the maximum on-resistance?

280mOhm at Id = 1A and Vgs = 4.5V.

What gate drive voltages are recommended?

1.8V and 4.5V.

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