ADS7816EB/250G4
Texas Instruments
The Texas Instruments ADS7816EB/250G4 is a 12-bit analog-to-digital converter. It offers a sampling rate of 200kSPS and operates with low power consumption.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Vishay SI1305DL-T1-E3 is a P-Channel MOSFET from the TrenchFET Power MOSFET family, designed for 1.8 V gate-source operation. It offers a drain-source voltage of -8V and a continuous drain current of up to -0.92A at 25°C. The MOSFET exhibits low on-state resistance, with values as low as 0.280 Ω at VGS = -4.5V and ID = -1A.
This device is suitable for various applications requiring efficient switching and low power consumption. It is packaged in an SC-70-3 (SOT-323) surface-mount package, making it ideal for space-constrained designs. The operating junction and storage temperature range is -55°C to 150°C.
Key electrical characteristics include a gate threshold voltage of -0.45V (max) and a gate-body leakage of ±100 nA. The maximum power dissipation is rated at 0.34W at 25°C ambient temperature. Thermal resistance from junction-to-ambient is typically 315°C/W.
The drain-source voltage is -8V.
The maximum continuous drain current at 25°C is -0.92A.
The Rds(on) is 0.280 Ω.
The operating junction and storage temperature range is -55°C to 150°C.
It is in an SC-70-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
