SI1305DL-T1-E3 The Vishay Dale SI1305DL-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 860mA. It is housed in a surface-mount SC-70-3 package.
Mfr Part #:

SI1305DL-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1305DL-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 860mA. It is housed in a surface-mount SC-70-3 package.
✓ Total Stock: 606,081 pcs
$ Price Range: $0.99

SI1305DL-T1-E3 Available from 3 distributors

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602,667 pcs
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3,000 pcs
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414 pcs
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SI1305DL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1305DL-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1305DL-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vds) of 8V and a continuous drain current (Id) of 860mA at 25°C. The device exhibits a low on-state resistance (Rds On) of 280mOhm at 1A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 450mV at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes TrenchFET technology and comes in a compact SC-70, SOT-323 package, suitable for surface mounting. The maximum power dissipation is rated at 290mW (Ta).

 

Key electrical characteristics include a gate-source voltage (Vgs) maximum of ±8V and a gate charge (Qg) of 4nC at 4.5V. The drive voltage ranges from 1.8V to 4.5V. This component is RoHS3 compliant and Halogen-free.

SI1305DL-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1305DL-T1-E3 P-Channel MOSFET
Subcategory: Single

SI1305DL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

SI1305DL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1305DL-T1-E3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Continuous drain current of 860mA at 25°C.
  • Low on-resistance of 280mOhm at 1A, 4.5V.
  • Surface mount SC-70-3 package.
  • Operating temperature range of -55°C to 150°C.

SI1305DL-T1-E3 Applications

  • Suitable for low-voltage switching applications.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in battery-powered systems.

SI1305DL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI1305DL-T1-E3?

The drain-source voltage (Vds) is 8V.

What is the continuous drain current for the SI1305DL-T1-E3?

The continuous drain current is 860mA at 25°C.

What is the on-state resistance of this MOSFET?

The Rds On is a maximum of 280mOhm at 1A and 4.5V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1305DL-T1-E3 in?

It is supplied in an SC-70-3 package, also known as SC-70 or SOT-323.

Is this component RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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