| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 1218+ | On Request | On Request |
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This Vishay Dale SI1303DL-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and can handle a continuous drain current of 670mA at 25°C ambient temperature.
The MOSFET operates within a temperature range of -55°C to 150°C and has a gate-source voltage range of ±12V. The on-resistance is a maximum of 430mOhm at 1A drain current and 4.5V gate-source voltage. The gate charge is 2.2 nC at 4.5V gate-source voltage.
Packaged in an SC-70-3 (SOT-323) surface-mount package, this component is suitable for space-constrained designs. It has a maximum power dissipation of 290mW at 25°C. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
The device is available in an SC-70 (SOT-323) surface-mount package, specifically SC-70-3.
-55°C to 150°C (junction temperature).
Maximum gate charge is 2.2nC at Vgs=4.5V.
Maximum on-resistance is 430mOhm at Id=1A and Vgs=4.5V.
Maximum gate threshold voltage is 1.4V at Id=250µA.
Maximum power dissipation is 290mW at 25°C ambient.