| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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106,020 pcs
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106020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay SI1302DL-T1-E3 is a surface-mount N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 600mA at ambient temperature. The device offers a maximum Rds On of 480mOhm at 600mA drain current and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The gate-source voltage maximum is ±20V, and the gate threshold voltage is 3V at 250µA.
The SI1302DL-T1-E3 is packaged in an SC-70-3 case, suitable for surface mounting. The maximum power dissipation is rated at 280mW at ambient temperature. This component is part of the single MOSFET category.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The continuous drain current is 600 mA.
The maximum Rds On is 480 mOhm at 600mA and 10V.
The operating temperature range is -55°C to 150°C.
This MOSFET is supplied in an SC-70-3 package.