SI1300BDL-T1-E3 The SI1300BDL-T1-E3 is an N-Channel MOSFET from Vishay Dale with a 20V drain-to-source voltage and 400mA continuous drain current. It features a low on-resistance and is housed in an SC-70-3 package.
Mfr Part #:

SI1300BDL-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The SI1300BDL-T1-E3 is an N-Channel MOSFET from Vishay Dale with a 20V drain-to-source voltage and 400mA continuous drain current. It features a low on-resistance and is housed in an SC-70-3 package.
✓ Total Stock: 3,330 pcs
$ Price Range: $0.99

SI1300BDL-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,330 pcs
3330 pcs On Request 1 On Request On Request 1420+ On Request On Request

SI1300BDL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1300BDL-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1300BDL-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vds) of 20V and a continuous drain current (Id) of 400mA at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 850mOhm at 250mA drain current and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is packaged in an SC-70-3 (SOT-323) surface mount configuration, making it suitable for compact designs. It is part of the TrenchFET® series, known for its power efficiency. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI1300BDL-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SI1300BDL-T1-E3 N-Channel 20V MOSFET
Subcategory: N-Channel

SI1300BDL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1300BDL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1300BDL-T1-E3 Features

  • N-Channel 20V MOSFET
  • 400mA continuous drain current
  • 850mOhm max Rds On
  • SC-70-3 (SOT-323) package
  • RoHS3 compliant

SI1300BDL-T1-E3 Applications

  • Ideal for portable battery-powered consumer electronics.
  • Used in low-voltage logic level switching circuits.
  • Suitable for DC-DC converter load switches.
  • Applied in automotive sensor interface modules.
  • Designed for mobile phone power management systems.

SI1300BDL-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the SI1300BDL-T1-E3?

The drain-to-source voltage (Vds) is 20V.

What is the continuous drain current for the SI1300BDL-T1-E3?

The continuous drain current is 400mA at 25°C case temperature.

What is the maximum on-resistance of the SI1300BDL-T1-E3?

The maximum on-resistance (Rds On) is 850mOhm at 250mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI1300BDL-T1-E3 in?

It is supplied in an SC-70-3 (SOT-323) package.

Is the SI1300BDL-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

Home
Account

Categories