SI1077X-T1-GE3 The Vishay Dale SI1077X-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage. It features a low on-resistance and is available in a surface mount package.
Mfr Part #:

SI1077X-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1077X-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage. It features a low on-resistance and is available in a surface mount package.
✓ Total Stock: 306,286 pcs
$ Price Range: $0.99

SI1077X-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
258,286 pcs
258286 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
48,000 pcs
48000 pcs On Request 1 On Request On Request 19+ On Request On Request

SI1077X-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1077X-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1077X-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices and power management. It offers a drain-source breakdown voltage of 20V and a maximum on-resistance as low as 78mOhm at 1.8A and 4.5V Vgs.

 

This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum continuous drain current of 1.75A at 25°C ambient temperature. It is supplied in a compact SC-89 (SOT-563F) surface mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a gate-source voltage range of ±8V and a gate charge of 31.1 nC at 8V Vgs. The device also features a maximum power dissipation of 330mW at 25°C ambient temperature.

SI1077X-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20 V MOSFET
Subcategory: P-Channel

SI1077X-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1077X-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1077X-T1-GE3 Features

  • P-Channel TrenchFET Power MOSFET
  • 20V Drain-Source Voltage
  • Low On-Resistance (78mOhm @ 1.8A, 4.5V)
  • Surface Mount SC-89 Package
  • Wide Operating Temperature Range

SI1077X-T1-GE3 Applications

  • Ideal for load switching
  • Suitable for portable devices
  • Used in power management
  • Compact design integration

SI1077X-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI1077X-T1-GE3?

The drain-source breakdown voltage is -20V (minimum) at VGS = 0V and ID = -250 µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.75A at 25°C ambient temperature.

What is the on-resistance at 4.5V gate drive?

The on-resistance is 78 mOhm maximum at VGS = -4.5V and ID = 1.8A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package options are available?

The device is available in SC-89, SOT-563, SOT-666, and SOT-563F (SC-89) surface mount packages.

What is the gate threshold voltage?

The gate threshold voltage is 1V maximum at VDS = VGS and ID = -250 µA.

What is the gate charge?

The maximum gate charge is 31.1 nC at VGS = 8V.

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