| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1077X-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices and power management. It offers a drain-source breakdown voltage of 20V and a maximum on-resistance as low as 78mOhm at 1.8A and 4.5V Vgs.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum continuous drain current of 1.75A at 25°C ambient temperature. It is supplied in a compact SC-89 (SOT-563F) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a gate-source voltage range of ±8V and a gate charge of 31.1 nC at 8V Vgs. The device also features a maximum power dissipation of 330mW at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V (minimum) at VGS = 0V and ID = -250 µA.
The maximum continuous drain current is 1.75A at 25°C ambient temperature.
The on-resistance is 78 mOhm maximum at VGS = -4.5V and ID = 1.8A.
The operating junction temperature range is -55°C to 150°C.
The device is available in SC-89, SOT-563, SOT-666, and SOT-563F (SC-89) surface mount packages.
The gate threshold voltage is 1V maximum at VDS = VGS and ID = -250 µA.
The maximum gate charge is 31.1 nC at VGS = 8V.