| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20,361 pcs
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20361 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1073X-T1-GE3 is a P-Channel Power MOSFET designed for load switch applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 0.98A at 25°C.
Key electrical characteristics include a low on-state resistance of 173mOhm at 10V gate-source voltage and 0.98A drain current. The device also offers a gate charge of 9.45nC at 10V and an input capacitance of 265pF.
This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a compact SC-89 (SOT-563F) surface-mount package, making it suitable for space-constrained designs. The device is RoHS3 compliant and halogen-free.
Applications include load switching and general-purpose power management where a P-channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30V at VGS = 0V and ID = -250 µA.
The maximum continuous drain current is -0.98A at TA = 25°C.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in a surface-mount SC-89 (SOT-563F) package.
The RoHS status is listed as compliant but is unverified.
The maximum on-state resistance is 173 mOhm at VGS = -10V and ID = -0.98A.
The maximum power dissipation is 236 mW at TA = 25°C.