| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI1070X-T1-E3 is an N-Channel Power MOSFET utilizing TrenchFET technology. It is rated for a 30V drain-source voltage and can handle a continuous drain current of 1.2A at 25°C ambient temperature.
Key electrical specifications include a low on-state resistance of 99mΩ at 1.2A and 4.5V VGS, and a gate-source threshold voltage of 1.55V maximum. The device has an input capacitance of 385pF and a gate charge of 8.3nC.
Designed for applications such as load switching in portable devices, this MOSFET operates within a junction temperature range of -55°C to 150°C. It is housed in a compact SC-89 (SOT-563F) surface-mount package.
The SI1070X-T1-E3 is halogen-free and compliant with RoHS Directive 2002/95/EC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
SOT-563, SOT-666, and SC-89 (SOT-563F) surface mount packages.
-55°C to 150°C.
Maximum 1.55 V.
0.236 W at 25°C ambient.
99 mΩ maximum.
1.2 A at 25°C ambient.