SI1062X-T1-GE3 The Vishay Dale SI1062X-T1-GE3 is an N-Channel MOSFET designed for load and power switching applications. It features a 20V drain-source voltage and a compact SC-89 package.
Mfr Part #:

SI1062X-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1062X-T1-GE3 is an N-Channel MOSFET designed for load and power switching applications. It features a 20V drain-source voltage and a compact SC-89 package.
✓ Total Stock: 83,301 pcs
$ Price Range: $0.99

SI1062X-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI1062X-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1062X-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1062X-T1-GE3 is an N-Channel MOSFET with a drain-source breakdown voltage of 20V. It is suitable for load and power switching in portable devices, battery-operated systems, and power supply converter circuits. The MOSFET offers a maximum on-resistance of 420mOhm at 500mA and 4.5V Vgs, with a continuous drain current rating of 530mA at 25°C.

 

This device utilizes TrenchFET power MOSFET technology and includes gate-source ESD protection up to 1000V. It is available in a surface-mount SC-89 package. The operating temperature range is -55°C to +150°C.

 

Key electrical characteristics include a gate charge of 2.7nC maximum at 8V Vgs and a gate-source threshold voltage of 1V maximum at 250µA. The maximum power dissipation is 220mW at 25°C ambient temperature.

 

The SI1062X-T1-GE3 is lead (Pb)-free and halogen-free, aligning with modern environmental standards.

SI1062X-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI1062X-T1-GE3 N-Channel 20V MOSFET
Subcategory: N-Channel

SI1062X-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1062X-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1062X-T1-GE3 Features

  • N-Channel 20V TrenchFET power MOSFET.
  • Low on-resistance of 420mOhm max.
  • Compact SC-89 surface mount package.
  • 1000V gate-source ESD protection.
  • Lead (Pb)-free and halogen-free.

SI1062X-T1-GE3 Applications

  • Load and power switching.
  • Drivers for relays and solenoids.
  • Battery operated systems.
  • Power supply converter circuits.

SI1062X-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI1062X-T1-GE3?

The drain-source breakdown voltage is 20V.

What is the maximum on-resistance of the SI1062X-T1-GE3?

The maximum on-resistance is 420mOhm at 500mA and 4.5V Vgs.

What is the continuous drain current rating?

The continuous drain current is 530mA at 25°C ambient temperature.

What package type is the SI1062X-T1-GE3 available in?

It is available in an SC-89 package.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is the SI1062X-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The MSL is 1 Unlimited.

Home
Account

Categories