| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI1058X-T1-GE3 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in an SC-89 (SOT-563F) package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 1.3A at ambient temperature. The on-resistance (Rds On) is specified at a maximum of 91mOhm at 1.3A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1.55V at 250µA.
Thermal characteristics include a maximum power dissipation of 236mW at ambient temperature and an operating temperature range of -55°C to 150°C (TJ). The input capacitance (Ciss) is 380pF at 10V, and the gate charge (Qg) is 5.9nC at 5V.
This component is suitable for various electronic designs requiring a compact and efficient N-channel MOSFET. Its surface mount package facilitates integration into dense circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
It is packaged in SC-89 (SOT-563F) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current (Id) is 1.3A at ambient temperature.
The maximum on-resistance is 91mOhm at Id=1.3A and Vgs=4.5V.
The gate threshold voltage is 1.55V at 250µA, making it suitable for logic-level gate drive.
The maximum gate charge is 5.9nC at Vgs=5V.