| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The SI1035X-T1-GE3 is a dual N-channel and P-channel enhancement-mode MOSFET array from Vishay Dale. It is designed for low-voltage applications requiring both N and P channel devices in a single package. With a maximum drain-source voltage of 20V, it can handle continuous drain currents of 180mA for the N-channel and 145mA for the P-channel. The device features a logic-level gate, enabling operation with low gate drive voltages. The on-resistance is typically 5 Ohm at Vgs=4.5V and Id=200mA. The gate charge is only 0.75nC, allowing fast switching. The maximum power dissipation is 250mW. The device operates over a junction temperature range of -55°C to 150°C. The MOSFET is housed in a small SC-89 (SOT-563F) package, also compatible with SOT-563 or SOT-666 footprints, suitable for surface-mount assembly. Typical applications include load switching, power management in portable devices, and signal routing. The device is RoHS3 compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The N-channel can handle 180mA, and the P-channel 145mA.
The maximum on-resistance is 5 Ohm at Vgs=4.5V and Id=200mA.
The maximum gate threshold voltage is 400mV at Id=250µA.
The junction temperature range is -55°C to 150°C.
It is available in SC-89 (SOT-563F) package, also compatible with SOT-563 and SOT-666.