| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,150 pcs
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2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1035X-T1-E3 is a MOSFET array featuring both N-Channel and P-Channel transistors. It offers a drain-to-source voltage (Vdss) of 20V and current ratings of 180mA for one channel and 145mA for the other.
Key electrical characteristics include a maximum on-resistance (Rds On) of 5 Ohms at 200mA and 4.5V, and a gate threshold voltage (Vgs(th)) of 400mV at 250µA. The gate charge (Qg) is a maximum of 0.75nC at 4.5V. The device is rated for a power dissipation of 250mW.
This MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It is designed for surface mounting and comes in a SOT-563F (SC-89) package. The RoHS status is compliant with RoHS3 standards, and it has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The N-channel MOSFET is rated for 180mA and the P-channel for 145mA.
The maximum on-resistance is 5 Ohms at 200mA and 4.5V.
The operating temperature range is -55°C to 150°C.
It is available in SOT-563, SOT-666 packages, with the supplier device package being SC-89 (SOT-563F).
The maximum gate threshold voltage is 400mV at 250µA.