SI1034CX-T1-GE3 The Vishay Dale SI1034CX-T1-GE3 is a dual N-channel MOSFET designed for surface mount applications. It offers a 20V drain-to-source voltage and a continuous drain current of 610mA.
Mfr Part #:

SI1034CX-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1034CX-T1-GE3 is a dual N-channel MOSFET designed for surface mount applications. It offers a 20V drain-to-source voltage and a continuous drain current of 610mA.
✓ Total Stock: 602,691 pcs
$ Price Range: $0.99

SI1034CX-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
602,667 pcs
602667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
24 pcs
24 pcs On Request 1 On Request On Request On Request On Request On Request

SI1034CX-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI1034CX-T1-GE3 Description

Short technical summary and product information.

The SI1034CX-T1-GE3 from Vishay Dale is a dual N-channel MOSFET array belonging to the TrenchFET® series. This component is designed for surface mount applications and comes in an SC-89-6 package, also compatible with SOT-563 and SOT-666.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 610mA at 25°C. The on-resistance (Rds On) is specified as a maximum of 396 mOhm at 500mA and 4.5V gate-source voltage. It features a logic level gate and operates within a temperature range of -55°C to 150°C.

 

This MOSFET array is suitable for various electronic designs requiring efficient switching and low on-resistance in a compact form factor. Its surface mount capability facilitates integration into densely populated circuit boards.

SI1034CX-T1-GE3 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: SI1034CX-T1-GE3 Dual N-Channel MOSFET
Subcategory: Array

SI1034CX-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1034CX-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1034CX-T1-GE3 Features

  • Dual N-channel MOSFET array.
  • 20V drain-to-source voltage.
  • 610mA continuous drain current.
  • Logic level gate operation.
  • Surface mount SC-89-6 package.

SI1034CX-T1-GE3 Applications

  • Used in low-power load switching circuits.
  • Suitable for battery-powered portable devices.
  • Ideal for signal switching and routing.
  • Applicable in DC-DC converter designs.

SI1034CX-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SI1034CX-T1-GE3?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of this MOSFET?

The continuous drain current is 610mA at 25°C.

What is the on-resistance of the SI1034CX-T1-GE3?

The maximum on-resistance is 396 mOhm at 500mA and 4.5V gate voltage.

What package type does the SI1034CX-T1-GE3 use?

It uses an SC-89-6 surface-mount package, also known as SOT-563 or SOT-666.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

Is the SI1034CX-T1-GE3 a logic-level gate MOSFET?

Yes, it features a logic-level gate, allowing it to be driven by low-voltage logic signals.

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