| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The SI1032X-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 20V and a continuous drain current of 200mA. The device has a maximum on-resistance of 5 Ohm at a gate-source voltage of 4.5V and a drain current of 200mA. The gate threshold voltage is 1.2V at 250µA drain current, and the maximum gate charge is 0.75 nC at 4.5V. Power dissipation is limited to 300mW at ambient temperature.
This MOSFET is designed for low-power switching applications. It operates over a junction temperature range of -55°C to 150°C. The device is housed in a surface mount SC-89 (SOT-490) package, specifically the SC-89-3 variant, making it suitable for compact PCB designs.
Typical applications include load switching, level shifting, and power management in portable electronics. The low gate charge enables efficient switching at moderate frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
200mA.
5 Ohm at 200mA and 4.5V.
-55°C to 150°C.
SC-89, SOT-490 (SC-89-3).
1.2V at 250µA.
0.75 nC at 4.5V.