| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 1043 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1032X-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 200mA. The on-resistance (Rds On) is a maximum of 5 Ohms at 200mA and 4.5V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 300mW (Ta). The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA, and the gate-source voltage (Vgs) maximum is ±6V. It utilizes MOSFET (Metal Oxide) technology and is part of the TrenchFET® series.
The component is housed in an SC-89-3 package, suitable for surface mount applications. It is RoHS3 compliant and has an MSL rating of 1 Unlimited. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
The maximum continuous drain current is 200mA at ambient temperature.
The maximum on-resistance is 5 Ohms at Vgs = 4.5V and Id = 200mA.
It is available in a surface-mount SC-89 (SOT-490) package.
The junction temperature range is -55°C to 150°C.