Mfr Part #:

SI1032R-T1-GE3

Available from 3 distributors

Mfr Name: Vishay

N-Channel MOSFET, 20V Vdss, 140mA Id, 5Ohm Rds(on) at 4.5V drive. Surface mount in SC-75A package.

✓ Total Stock: 5,619 pcs

$ Price Range: $0.99

SI1032R-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,409 pcs On Request	1409 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	190 pcs On Request	190 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI1032R-T1-GE3 Description

Short technical summary and product information.

The SI1032R-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 140mA at ambient temperature. The on-resistance is rated at 5 Ohm maximum at a drain current of 200mA and gate-source voltage of 4.5V, enabling efficient low-voltage switching.

Gate drive voltage is specified at 1.5V (minimum) and 4.5V (recommended), with a maximum gate threshold voltage of 1.2V at 250µA. The device offers a low total gate charge of 0.75 nC at 4.5V, supporting fast switching in low-power applications. Maximum power dissipation is 250mW at ambient temperature.

The MOSFET is housed in a surface-mount SC-75 (SOT-416) package with supplier device package SC-75A. It operates over a junction temperature range of -55°C to 150°C, suitable for demanding thermal environments.

SI1032R-T1-GE3 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: Vishay Dale SI1032R-T1-GE3 N-Channel Power MOSFET

Subcategory: Single N-Channel

SI1032R-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI1032R-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1032R-T1-GE3 Features

N-Channel MOSFET with 20V drain rating.
Low on-resistance of 5 Ohms typical.
Low gate charge of 0.75 nC.
Surface mount SC-75A package.
Operating temperature range -55°C to 150°C.

SI1032R-T1-GE3 Applications

Ideal for battery-powered load switching.
Use in low-voltage power management.
Suitable for signal switching applications.
Works in portable device designs.

SI1032R-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage (Vdss) of the SI1032R-T1-GE3?

20 V.

What package is the SI1032R-T1-GE3 available in?

SC-75, SOT-416 (supplier package SC-75A).

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage (Vgs(th))?

1.2V at a drain current of 250 µA.

What is the on-resistance (Rds(on))?

5 Ohms at 200 mA drain current and 4.5V gate-source voltage.

What is the maximum power dissipation?

250 mW at ambient temperature.

What is the total gate charge (Qg)?

0.75 nC at 4.5V gate-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	140mA (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.75 nC @ 4.5 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	250mW (Ta)
Rds On (Max) @ Id, Vgs	5 Ohm @ 200mA, 4.5V
Supplier Device Package	SC-75A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±6V
Vgs(th) (Max) @ Id	1.2V @ 250µA