| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121 pcs
|
121 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1031R-T1-GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 140mA at ambient temperature. The device offers a low on-resistance of 8 Ohms maximum at 150mA and 4.5V gate drive. Gate threshold voltage is 1.2V max, and gate charge is 1.5nC at 4.5V, enabling efficient low-voltage switching. The MOSFET is housed in an SC-75 (SOT-416) surface-mount package with supplier device package SC-75A. Operating temperature range is -55°C to 150°C junction. This device meets RoHS3 compliance standards and is halogen free. It is suitable for load switching, signal switching, and power management in compact portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
-55°C to 150°C junction temperature.
It is available in SC-75, SOT-416 (SC-75A supplier device package), surface mount.
140mA (Ta).
Maximum 8 Ohm at 150mA and 4.5V gate-source voltage.
Maximum 1.2V at 250µA drain current.