SI1029X-T1-GE3 The Vishay Dale SI1029X-T1-GE3 is an N and P-Channel MOSFET designed for surface mount applications. It features a 60V Drain to Source Voltage and a 1.4 Ohm maximum On-Resistance.
Mfr Part #:

SI1029X-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1029X-T1-GE3 is an N and P-Channel MOSFET designed for surface mount applications. It features a 60V Drain to Source Voltage and a 1.4 Ohm maximum On-Resistance.
✓ Total Stock: 797,831 pcs
$ Price Range: $0.99

SI1029X-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI1029X-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1029X-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI1029X-T1-GE3 is an N and P-Channel MOSFET with a Metal Oxide technology. It is rated for a maximum Drain to Source Voltage (Vdss) of 60V and can handle currents of 305mA and 190mA. The On-Resistance (Rds On) is a maximum of 1.4 Ohms at 500mA and 10V.

 

Key electrical characteristics include an input capacitance (Ciss) of 30pF at 25V and a gate charge (Qg) of 0.75nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 250mW.

 

The device is packaged in an SC-89 (SOT-563F) case, which is a SOT-563, SOT-666 type package, and is designed for surface mounting. It features a Logic Level Gate, making it suitable for various electronic designs requiring efficient switching.

 

Environmental compliance includes RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH Unaffected status. These attributes make the SI1029X-T1-GE3 a reliable component for applications demanding specific performance and environmental considerations.

SI1029X-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1029X-T1-GE3 N and P-Channel MOSFET
Subcategory: Arrays

SI1029X-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1029X-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1029X-T1-GE3 Features

  • N and P-Channel MOSFET technology.
  • 60V Drain to Source Voltage rating.
  • 1.4 Ohm maximum On-Resistance.
  • Surface mount SC-89 package.
  • Logic Level Gate feature.

SI1029X-T1-GE3 Applications

  • Ideal for load switching in portable devices.
  • Used in DC-DC converter output stages.
  • Suitable for power management in compact modules.
  • Can be used in low-power motor control.
  • Applicable in battery protection circuits.

SI1029X-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the Drain to Source Voltage (Vdss) for the SI1029X-T1-GE3?

The maximum Drain to Source Voltage (Vdss) is 60V.

What is the maximum On-Resistance (Rds On) for this MOSFET?

The maximum On-Resistance is 1.4 Ohms at 500mA and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI1029X-T1-GE3 in?

It is supplied in an SC-89 (SOT-563F) package, also referred to as SOT-563 or SOT-666.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

SI1029X-T1-GE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SI1029X-T1-E3
SI1029X-T1-E3
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MOSFET N/P-CH 60V SOT563F
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