SI1026X-T1-GE3 The Vishay Dale SI1026X-T1-GE3 is an N-Channel MOSFET with a 60V Drain-Source Voltage and a maximum continuous drain current of 305mA. It features a low on-resistance of 1.4Ω at 500mA, 10V.
Mfr Part #:

SI1026X-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1026X-T1-GE3 is an N-Channel MOSFET with a 60V Drain-Source Voltage and a maximum continuous drain current of 305mA. It features a low on-resistance of 1.4Ω at 500mA, 10V.
✓ Total Stock: 36,705 pcs
$ Price Range: $0.99

SI1026X-T1-GE3 Available from 3 distributors

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30,000 pcs
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SI1026X-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1026X-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1026X-T1-GE3 is a 60V N-Channel MOSFET designed for various applications requiring efficient switching and low on-resistance. It offers a maximum continuous drain current of 305mA at 25°C and a low on-resistance of 1.4Ω when operating at 500mA and 10V.

 

This MOSFET features a low threshold voltage and low input capacitance, making it suitable for low-voltage operation and high-speed circuits. It is ESD protected up to 2000V and comes in a miniature SC-89 package, ideal for space-constrained designs.

 

Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage between 1V and 2.5V, and a maximum power dissipation of 250mW at 25°C. The operating temperature range is from -55°C to 150°C.

 

The SI1026X-T1-GE3 is compliant with RoHS and Halogen-free standards, making it suitable for environmentally conscious designs. Its surface-mount package facilitates easy integration into printed circuit boards.

SI1026X-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si1026X N-Channel 60V MOSFET
Subcategory: N-Channel

SI1026X-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1026X-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1026X-T1-GE3 Features

  • 60V Drain-Source Voltage rating.
  • 305mA maximum continuous drain current.
  • 1.4Ω maximum on-resistance.
  • Low threshold voltage and input capacitance.
  • ESD protected up to 2000V.

SI1026X-T1-GE3 Applications

  • Suitable for relay, solenoid, and lamp drivers.
  • Ideal for battery-operated systems.
  • Used in solid-state relay applications.
  • Designed for high-speed switching circuits.

SI1026X-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET array?

60V minimum drain-source breakdown voltage.

What is the continuous drain current handling capability?

305mA at 25°C ambient temperature, derated to 220mA at 85°C.

What is the package type for the SI1026X-T1-GE3?

SC-89 (SOT-563F) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature range.

What is the typical on-resistance at 10V gate drive?

1.4Ω typical at VGS = 10V, ID = 500mA.

What is the gate threshold voltage range?

Minimum 1V, typical 2V, maximum 2.5V at VDS = VGS, ID = 0.25mA.

Does this device have ESD protection?

Yes, gate-source HBM ESD rating of 2000V.

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