| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,495 pcs
|
2495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The SI1026X-T1-E3 from Vishay / Siliconix is a Dual N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 305mA at 25°C. The on-resistance (Rds On) is specified as a maximum of 1.4 Ohms at 500mA and 10V.
This MOSFET has a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA and an input capacitance (Ciss) of 30pF maximum at 25V. The maximum power dissipation is 250mW. The operating temperature range is from -55°C to 150°C (junction temperature).
The device is packaged in a SOT-563, SOT-666 (also referred to as SC-89 or SOT-563F) surface-mount package. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOT-563, SOT-666, and SC-89 (SOT-563F) supplier device package.
-55°C to 150°C (junction temperature).
1.4Ohm at 500mA and 10V gate drive.
0.6nC maximum at 4.5V gate voltage.
250mW.
30pF maximum at 25V drain-source voltage.