SI1026X-T1-E3 The Vishay Dale SI1026X-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low on-resistance and is supplied in a compact SOT-563F package.
Mfr Part #:

SI1026X-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1026X-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low on-resistance and is supplied in a compact SOT-563F package.
✓ Total Stock: 515 pcs
$ Price Range: $0.99

SI1026X-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
495 pcs
495 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request On Request On Request On Request

SI1026X-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1026X-T1-E3 Description

Short technical summary and product information.

The SI1026X-T1-E3 from Vishay Dale is an N-Channel MOSFET designed for various driver applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 305mA at 25°C. The device boasts a low on-resistance of 1.4Ω at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 500mA.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) ranging from 1V to 2.5V and a gate charge (Qg) of 0.6nC at 4.5V. The MOSFET is ESD protected up to 2000V.

 

This component is housed in a miniature SC-89 (SOT-563F) package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free.

 

Applications include drivers for relays, solenoids, lamps, and battery-operated systems.

SI1026X-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI1026X-T1-E3 N-Channel MOSFET
Subcategory: FET, MOSFET Arrays

SI1026X-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1026X-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1026X-T1-E3 Features

  • 60V drain-source voltage rating.
  • Low 1.4Ω on-resistance.
  • 305mA continuous drain current.
  • Compact SOT-563F package.
  • 2000V ESD protection.

SI1026X-T1-E3 Applications

  • Ideal for relay and solenoid drivers.
  • Suitable for battery-operated systems.
  • Used in high-speed switching circuits.
  • Applicable for lamp and display drivers.

SI1026X-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V minimum.

What is the maximum gate-source voltage?

±20V.

What package options are available?

SOT-563, SOT-666; supplier device package SC-89 (SOT-563F). Surface mount.

What is the operating temperature range?

-55°C to 150°C.

What is the continuous drain current rating?

305mA at 25°C, 220mA at 85°C.

What is the typical on-resistance?

1.4Ω typical at VGS=10V, ID=500mA; maximum 3Ω at VGS=4.5V, ID=200mA.

What is the gate-source ESD rating?

2000V HBM.

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