| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,807 pcs
|
2807 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,448 pcs
|
1448 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1025X-T1-GE3 is a dual P-channel MOSFET with a 60V drain-to-source voltage rating and a continuous drain current of 190mA. This device is designed for surface mount applications and comes in an SC-89 (SOT-563F) package, dissipating up to 250mW of power.
Key electrical characteristics include a maximum on-resistance of 4 Ohm at 500mA and 10V, a gate charge of 1.7nC at 15V, and an input capacitance of 23pF at 25V. The gate threshold voltage is a maximum of 3V at 250µA, and it features a logic level gate.
Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for various electronic designs. Its construction utilizes MOSFET (Metal Oxide) technology. The component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
190mA.
SC-89 (SOT-563F) surface-mount package.
-55°C to 150°C (junction temperature).
4 Ohms maximum at 500mA drain current and 10V gate voltage.
Yes, it features a logic-level gate with a maximum threshold voltage of 3V at 250µA.