| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,605 pcs
|
1605 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI1025X-T1-E3 from Vishay Dale is a dual P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current of 190mA. The MOSFET has an on-resistance (Rds On) of 4 Ohms at 500mA and 10V, with a gate charge (Qg) of 1.7nC at 15V.
This device operates with a gate threshold voltage (Vgs(th)) of 3V at 250µA and features a logic level gate for compatibility with lower voltage control signals. The power dissipation is rated at 250mW. The operating temperature range is from -55°C to 150°C (TJ).
The SI1025X-T1-E3 is supplied in a SOT-563F (SC-89) surface mount package. Its configuration consists of two P-Channel MOSFETs, making it suitable for applications requiring complementary switching or dual-channel control. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum drain current is 190mA.
The maximum on-resistance is 4Ohm at 500mA drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
It is available in a SOT-563F (SC-89) surface mount package, also compatible with SOT-563 and SOT-666.