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SI1024XT1E3 The Vishay Dale SI1024XT1E3 is a dual N-Channel MOSFET featuring a 20V drain-source voltage and 485mA continuous drain current. It is supplied in a SOT-563 package.
Mfr Part #:

SI1024XT1E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1024XT1E3 is a dual N-Channel MOSFET featuring a 20V drain-source voltage and 485mA continuous drain current. It is supplied in a SOT-563 package.
✓ Total Stock: 500 pcs
$ Price Range: $1.32

SI1024XT1E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
500 pcs
On Request
500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI1024XT1E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Gate Charge
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
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SI1024XT1E3 Description

Short technical summary and product information.

The SI1024XT1E3 from Vishay Dale is a dual N-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 485mA at 25°C.

 

Key electrical characteristics include a maximum on-resistance of 700mOhm at 600mA and 4.5V, a gate threshold voltage (Vgs(th)) of 900mV at 250µA, and a gate charge (Qg) of 0.75nC at 4.5V. The device has a maximum power dissipation of 250mW and operates within a temperature range of -55°C to 150°C.

 

This MOSFET utilizes Metal Oxide technology and is configured as two N-Channel FETs. It features a Logic Level Gate, making it suitable for low-voltage control applications. The component is packaged in SOT-563, SOT-666, and is designed for surface mount installation.

 

Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. The SI1024XT1E3 is part of the TrenchFET® series.

SI1024XT1E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: SI1024XT1E3 Dual N-Channel MOSFET
Subcategory: MOSFET Array

SI1024XT1E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1024XT1E3 Estimated Pricing

Qty Low High
1+ $1.32 $1.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1024XT1E3 Features

  • Dual N-Channel MOSFET configuration.
  • 20V drain-source voltage rating.
  • 485mA continuous drain current.
  • Logic Level Gate feature.
  • SOT-563, SOT-666 package.

SI1024XT1E3 Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Efficient control applications.

SI1024XT1E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI1024XT1E3?

20V.

What is the continuous drain current rating?

485mA at 25°C.

What is the on-resistance of this MOSFET?

700mOhm maximum at 600mA and 4.5V gate drive.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is the SI1024XT1E3 available in?

SOT-563 or SOT-666, with supplier device package SC-89 (SOT-563F).

Is this a logic-level gate MOSFET?

Yes, it features a logic-level gate with a maximum threshold voltage of 900mV at 250µA.

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