| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,206 pcs
|
1206 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI1024X-T1-E3 from Vishay Dale is a dual N-channel MOSFET array designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 485mA at 25°C. The device features a logic level gate, making it suitable for low-voltage control applications.
Key electrical characteristics include a maximum on-resistance (Rds On) of 700mOhm at 600mA and 4.5V, and a maximum gate charge (Qg) of 0.75nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 900mV at 250µA. The component has a power dissipation rating of 250mW.
This MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It is housed in a SOT-563, SOT-666 package, specifically the SC-89 (SOT-563F) supplier device package, and is designed for surface mounting. The component is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
This component uses an SOT-563 (SC-89) surface mount package.
The operating temperature range spans from -55°C to 150°C.
The maximum gate threshold voltage is 900mV at 250µA drain current.
The maximum on-resistance is 700mOhm when driven at 4.5V with 600mA drain current.