SI1022R-T1-GE3 The Vishay Dale SI1022R-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating and a continuous drain current of 330mA. It features a Surface Mount SC-75A package.
Mfr Part #:

SI1022R-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1022R-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating and a continuous drain current of 330mA. It features a Surface Mount SC-75A package.
✓ Total Stock: 56,977 pcs
$ Price Range: $0.99

SI1022R-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI1022R-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1022R-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI1022R-T1-GE3 is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current of up to 330mA at ambient temperature. The MOSFET has a maximum power dissipation of 250mW (Ta).

 

Key electrical characteristics include a gate charge (Qg) of 0.6 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 30 pF maximum at 25V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA Id, and the maximum gate-source voltage (Vgs) is ±20V. The on-resistance (Rds On) is 1.25 Ohm maximum at 500mA Id and 10V Vgs. The drive voltage ranges from 4.5V to 10V.

 

This component operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for surface mounting. The package type is SC-75A, also referred to as SC-75 or SOT-416.

SI1022R-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1022R-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI1022R-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1022R-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1022R-T1-GE3 Features

  • 60V drain-source voltage rating.
  • 330mA continuous drain current.
  • Low gate charge of 0.6 nC.
  • Surface mount SC-75A package.
  • Wide operating temperature range.

SI1022R-T1-GE3 Applications

  • Suitable for general switching applications.
  • Ideal for low-power circuit designs.
  • Used in compact electronic devices.
  • Component for power management circuits.

SI1022R-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60 V

What is the package type?

SC-75A surface mount package (SC-75, SOT-416)

What is the operating temperature range?

-55°C to 150°C

What is the continuous drain current?

330 mA at ambient temperature

What is the maximum on-resistance?

1.25 Ohm at 500mA drain current and 10V gate drive

What is the gate threshold voltage?

2.5V at 250µA drain current

What is the input capacitance?

30 pF at 25V drain-source voltage

SI1022R-T1-GE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SI1022R-T1-E3
SI1022R-T1-E3
Vishay
MOSFET N-CH 60V 330MA SC75A
View Part
Home
Account

Categories