| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,425 pcs
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1425 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1021R-T1-GE3 is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 60V and a continuous current rating of 190mA at ambient temperature. It operates within a temperature range of -55°C to 150°C.
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in an SC-75A (SOT-416) surface mount case. Key electrical characteristics include a maximum on-resistance (Rds On) of 4 Ohm at 500mA and 10V, a gate threshold voltage (Vgs(th)) of 3V at 250µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 23pF at 25V, and the gate charge (Qg) is 1.7nC at 15V. The maximum power dissipation is 250mW at ambient temperature.
Designed for various electronic applications, this component is suitable for circuits requiring a P-Channel MOSFET with specific voltage and current handling capabilities. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI1021R-T1-GE3 is 60V.
The SI1021R-T1-GE3 has a continuous current rating of 190mA.
The operating temperature range for the SI1021R-T1-GE3 is -55°C to 150°C.
The SI1021R-T1-GE3 is available in the SC-75A package.
The SI1021R-T1-GE3 is designed for surface mount installation.
The maximum on-resistance (Rds On) for the SI1021R-T1-GE3 is 4 Ohm when measured at 500mA and 10V.