SI1016X-T1-GE3 The Vishay Dale SI1016X-T1-GE3 is a complementary N- and P-Channel MOSFET with a 20V drain-source voltage. It is designed for low-voltage operation and features a logic level gate.
Mfr Part #:

SI1016X-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1016X-T1-GE3 is a complementary N- and P-Channel MOSFET with a 20V drain-source voltage. It is designed for low-voltage operation and features a logic level gate.
✓ Total Stock: 454,122 pcs
$ Price Range: $0.99

SI1016X-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
452,000 pcs
452000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,122 pcs
2122 pcs On Request 1 On Request On Request 24+ On Request On Request

SI1016X-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI1016X-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1016X-T1-GE3 is a complementary N- and P-Channel MOSFET designed for 20V (D-S) applications. This device features a very small footprint in a SOT-563 package, making it suitable for space-constrained designs. It offers low on-resistance, with N-Channel at 0.7  at 4.5V VGS and P-Channel at 1.2  at -4.5V VGS. The MOSFET operates at 1.8V and includes 2000V ESD protection.

 

Key electrical characteristics include a low threshold voltage of ±0.8V (Typ.) and fast switching speeds of 14 ns. The continuous drain current is rated at 485mA for N-Channel and 370mA for P-Channel at 25°C ambient temperature. Power dissipation is 250mW at 25°C. The operating temperature range is -55°C to 150°C.

 

This MOSFET is suitable for applications such as replacing digital transistors, level-shifting, battery-operated systems, and power supply converter circuits. It is RoHS 3 compliant and halogen-free.

SI1016X-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si1016X N- and P-Channel 20 V (D-S) MOSFET
Subcategory: N and P-Channel

SI1016X-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1016X-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1016X-T1-GE3 Features

  • Complementary N and P-Channel MOSFETs
  • 20V Drain-Source Voltage rating
  • Low On-Resistance: 0.7  N-Ch, 1.2  P-Ch
  • Logic Level Gate operation
  • 2000V ESD Protection

SI1016X-T1-GE3 Applications

  • Level-shifting applications
  • Battery operated systems
  • Power supply converter circuits
  • Replacing digital transistors

SI1016X-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI1016X-T1-GE3?

The drain-source voltage (Vds) for the SI1016X-T1-GE3 is 20V.

What is the maximum on-resistance of the SI1016X-T1-GE3?

The maximum on-resistance (Rds On) for the N-Channel SI1016X-T1-GE3 is 700mOhm at 600mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range for the SI1016X-T1-GE3 is -55°C to 150°C.

Is the SI1016X-T1-GE3 RoHS compliant?

Yes, the SI1016X-T1-GE3 is RoHS 3 compliant.

Does the SI1016X-T1-GE3 meet Halogen Free requirements?

Yes, the SI1016X-T1-GE3 is halogen-free according to IEC 61249-2-21 definition.

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