SI1016CX-T1-GE3 The Vishay Dale SI1016CX-T1-GE3 is a dual N- and P-channel MOSFET with a 20V drain-source voltage. It is housed in an SC-89 package.
Mfr Part #:

SI1016CX-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1016CX-T1-GE3 is a dual N- and P-channel MOSFET with a 20V drain-source voltage. It is housed in an SC-89 package.
✓ Total Stock: 64,497 pcs
$ Price Range: $0.99

SI1016CX-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,267 pcs
60267 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
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210 pcs
210 pcs On Request 1 On Request On Request On Request On Request On Request

SI1016CX-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1016CX-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1016CX-T1-GE3 is a complementary N- and P-channel MOSFET designed for low-voltage applications. It features a drain-source voltage of 20V and a low on-resistance of 396mOhm at 500mA and 4.5V Vgs. The gate charge is typically 2nC at 4.5V Vgs, and input capacitance is 43pF at 10V Vds.

 

This MOSFET is suitable for high-side switching, load switch, small signal switches, and level-shift applications. It operates within a temperature range of -55°C to 150°C (TJ) and is available in an SC-89 (SOT-563F) surface-mount package.

 

The device offers TrenchFET power MOSFET technology, ease in driving switches, low offset voltage, and high-speed circuit compatibility. It also provides typical ESD protection of 900V for both n-channel and p-channel configurations.

SI1016CX-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI1016CX-T1-GE3 Dual N- and P-Channel MOSFET
Subcategory: N and P-Channel

SI1016CX-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1016CX-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1016CX-T1-GE3 Features

  • Complementary N- and P-Channel MOSFETs
  • 20V Drain-Source Voltage
  • Low On-Resistance: 396mOhm @ 500mA, 4.5V
  • SC-89 Surface Mount Package
  • Low-Voltage Operation

SI1016CX-T1-GE3 Applications

  • Ideal for load switches
  • Suitable for small signal switches
  • Used for level-shift applications
  • Designed for battery operated systems
  • Applicable in portable devices

SI1016CX-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI1016CX-T1-GE3?

The drain-source breakdown voltage is 20V for the N-channel and -20V for the P-channel.

What is the maximum on-resistance of the SI1016CX-T1-GE3?

The maximum on-resistance is 396mOhm at a drain current of 500mA and gate-source voltage of 4.5V.

What is the typical gate charge for the SI1016CX-T1-GE3?

The typical gate charge is 2nC at a gate-source voltage of 4.5V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1016CX-T1-GE3 available in?

It is available in an SC-89 (SOT-563F) surface mount package.

Is the SI1016CX-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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