| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,552 pcs
|
2552 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
278 pcs
|
278 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1013X-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. This component is designed for surface mount applications and comes in an SC-89-3 package. It features a maximum drain-source voltage of 20V and a continuous drain current of 350mA.
Key electrical characteristics include a gate-source breakdown voltage of ±6V and a gate threshold voltage of 450mV at 250µA. The on-resistance (Rds On) is a maximum of 1.2 Ohms at 350mA and 4.5V. The power dissipation is rated at 250mW (Ta).
Operating temperature ranges from -55°C to 150°C. The MOSFET technology utilizes Metal Oxide semiconductor principles. This component is suitable for various electronic switching applications where a P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The continuous drain current is 350mA.
The Rds On is a maximum of 1.2 Ohms at 350mA and 4.5V.
The operating temperature range is -55°C to 150°C.
It is supplied in an SC-89-3 surface mount package.
Yes, it is RoHS3 compliant.