| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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29,960 pcs
|
29960 pcs | On Request | 1 | On Request | On Request | 1105+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET, part number SI1013R-T1-GE3 from Vishay Siliconix, is suitable for various electronic applications requiring efficient switching. It operates with a drain-to-source voltage of up to 20V and can handle a continuous drain current of 350mA at ambient temperature. The device has a low on-resistance of 1.2 Ohm at a gate-source voltage of 4.5V, with a gate threshold voltage of 450mV at 250µA.
The MOSFET is designed for surface mounting and comes in a compact SC-75A package, also compatible with SOT-416 footprints. Its operating temperature range is from -55°C to 150°C. The gate charge is specified at 1.5nC at 4.5V. This component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
Key electrical characteristics include a maximum gate-source voltage of ±6V and a power dissipation of 150mW at ambient temperature. The drive voltage range is between 1.8V and 4.5V. This MOSFET is an ideal choice for applications needing a reliable P-channel switching solution in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
350mA at ambient temperature.
1.2Ohm at 350mA drain current and 4.5V gate-source voltage.
450mV at 250µA drain current.
-55°C to 150°C.
SC-75, SOT-416, and supplier device package SC-75A.
1.5nC at 4.5V gate-source voltage.