| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,668 pcs
|
27668 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,767 pcs
|
9767 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1013CX-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale. It features a drain-source breakdown voltage of -20 V (minimum) and a continuous drain current of -0.45 A at 25 °C ambient. The device offers a maximum on-resistance of 760 mOhm at VGS = -4.5 V and ID = 400 mA, with a typical threshold voltage of -0.4 V.
This MOSFET is designed for low-power switching applications. It can dissipate up to 190 mW at 25 °C ambient temperature. The gate-source voltage is rated at ±8 V maximum. The part is supplied in a compact SC89-3 surface-mount package, suitable for space-constrained designs.
Typical applications include load switching, power management in portable devices, and general-purpose switching circuits where a P-Channel device is required. The device is rated for pulsed drain currents up to -1.5 A (300 µs pulse width).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -20 V at VGS = 0 V and ID = -250 μA.
The maximum continuous drain current is -0.45 A at TA = 25 °C and -0.36 A at TA = 70 °C.
The maximum on-resistance is 760 mOhm at VGS = 4.5 V and ID = 400 mA.
The maximum power dissipation is 190 mW at TA = 25 °C and 120 mW at TA = 70 °C.
The maximum gate-source voltage is ±8 V.