| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,205,000 pcs
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1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SI1012X-T1-GE3 is an N-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage of 20V and a continuous drain current of 500mA at 25°C.
The MOSFET has a maximum on-resistance of 700mOhm when operating at 600mA drain current and 4.5V gate-source voltage. The gate threshold voltage is 900mV at 250µA, and the maximum gate-to-source voltage is ±6V.
With a power dissipation of 250mW at 25°C, this component operates within a temperature range of -55°C to 150°C. It is packaged in an SC-89-3 (SOT-490) case, suitable for compact designs.
The SI1012X-T1-GE3 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 20V.
The continuous drain current is 500mA at 25°C.
The maximum on-resistance is 700mOhm at 600mA drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is available in SC-89, SOT-490 packages, specifically the SC-89-3 supplier package.
This MOSFET is designed for surface mount.