| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The SI1012X-T1-E3 is an N-Channel MOSFET manufactured by Vishay Dale, belonging to the TrenchFET® series. This obsolete component is designed for surface mount applications and comes in an SC-89 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 500mA at 25°C. The Rds On is a maximum of 700mOhm at 600mA and 4.5V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 900mV at 250µA, with a maximum gate-to-source voltage of ±6V. The drive voltage ranges from 1.8V to 4.5V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its maximum power dissipation is rated at 250mW (Ta). The component is classified under RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected statuses, though these are unverified.
Designed for various electronic circuits, its surface mount package makes it suitable for compact designs. The product status is listed as Obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 150°C (TJ).
The SI1012X-T1-E3 is supplied in an SC-89, SOT-490 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) at 25°C is 500mA (Ta).
The maximum on-resistance (Rds On) is 700mOhm at 600mA and 4.5V gate-to-source voltage.