Mfr Part #:

SI1012R-T1-GE3

Mfr Name: Vishay

The Vishay Dale SI1012R-T1-GE3 is an N-Channel MOSFET designed for surface mount applications. It features a 20V drain-to-source voltage and a continuous drain current of 500mA.

✓ Total Stock: 454,950 pcs

$ Price Range: $0.99

SI1012R-T1-GE3 Available from 4 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	452,000 pcs On Request	452000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	1,200 pcs On Request	1200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	1323+1321+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	750 pcs On Request	750 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI1012R-T1-GE3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale, part number SI1012R-T1-GE3, is suitable for various electronic applications requiring efficient switching. It operates with a drain-to-source voltage of 20V and can handle a continuous drain current of 500mA at ambient temperature.

The device features a maximum on-resistance of 700mOhm at 600mA and 4.5V Vgs. The gate threshold voltage is 900mV maximum at 250µA. It is designed for surface mounting and comes in an SC-75A package, also known as SOT-416.

Operating temperature ranges from -55°C to 150°C (TJ), and it has a power dissipation of 150mW (Ta). The gate charge is 0.75nC maximum at 4.5V Vgs, and the maximum gate-to-source voltage is ±6V.

This MOSFET utilizes Metal Oxide technology and is RoHS3 compliant. Its compact size and surface mount capability make it ideal for space-constrained designs.

SI1012R-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SI1012R-T1-GE3 N-Channel MOSFET

Subcategory: N-Channel

SI1012R-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI1012R-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1012R-T1-GE3 Features

N-Channel MOSFET technology.
20V drain-to-source voltage.
500mA continuous drain current.
700mOhm maximum on-resistance.
Surface mount SC-75A package.

SI1012R-T1-GE3 Applications

Ideal for general switching applications.
Suitable for power management circuits.
Used in portable electronic devices.
Component in low-power systems.

SI1012R-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

20V.

What is the package type?

SC-75A surface-mount package (also SC-75, SOT-416).

What is the operating temperature range?

-55°C to 150°C (junction).

What is the gate charge?

0.75nC at Vgs=4.5V.

What is the on-resistance?

700mOhm at Id=600mA, Vgs=4.5V.

What is the gate threshold voltage?

900mV at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	500mA (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.75 nC @ 4.5 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	150mW (Ta)
Rds On (Max) @ Id, Vgs	700 mOhm @ 600mA, 4.5V
Supplier Device Package	SC-75A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±6V
Vgs(th) (Max) @ Id	900 mV @ 250µA