| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
322,857 pcs
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322857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1011X-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 480mA at 25°C ambient temperature.
This MOSFET offers a low on-resistance (Rds On) of 640mOhm at a gate-source voltage (Vgs) of -4.5V, ensuring efficient power handling. The gate charge (Qg) is typically 1.15nC at Vgs = -4.5V.
Packaged in an SC-89 (SOT-490) surface-mount case, the SI1011X-T1-GE3 is suitable for compact designs. It operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include a typical ESD protection of 700V (HBM) and a maximum power dissipation of 190mW at 25°C. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -12V.
The maximum continuous drain current at 25°C is -0.48A.
The typical on-resistance is 640mOhm at 400mA and -4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is in an SC-89, SOT-490 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.