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SH8M41TB1 The ROHM Semiconductor SH8M41TB1 is an N and P-channel MOSFET designed for surface mount applications. It features an 80V drain-source voltage and supports continuous drain currents of 3.4A and 2.6A.
Mfr Part #:

SH8M41TB1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SH8M41TB1 is an N and P-channel MOSFET designed for surface mount applications. It features an 80V drain-source voltage and supports continuous drain currents of 3.4A and 2.6A.
✓ Total Stock: 8 pcs
$ Price Range: $0.99

SH8M41TB1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
8 pcs
On Request
8 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SH8M41TB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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SH8M41TB1 Description

Short technical summary and product information.

The ROHM Semiconductor SH8M41TB1 is a dual N-channel and P-channel MOSFET suitable for various electronic applications. It is packaged in an 8-SOIC (SOP8) surface mount configuration, offering a power dissipation of 2W and an operating temperature range up to 150°C.

 

Key electrical characteristics include a drain-to-source voltage of 80V, continuous drain currents of 3.4A for the N-channel and 2.6A for the P-channel, and a maximum on-resistance of 130mOhm at 3.4A and 10V. The MOSFET features a logic level gate and a gate threshold voltage of 2.5V at 1mA. Input capacitance is rated at 600pF at 10V, and gate charge is 9.2nC at 5V.

 

This component is designed for surface mounting, making it suitable for compact PCB designs. Its dual N/P-channel configuration provides flexibility in circuit design. The device operates within a wide temperature range, ensuring reliability in various environmental conditions.

SH8M41TB1 Quick Information

Product Type: MOSFET
Canonical Name: SH8M41TB1 N and P-Channel MOSFET
Subcategory: N and P-Channel

SH8M41TB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SH8M41TB1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SH8M41TB1 Features

  • N and P-Channel MOSFET configuration.
  • 80V drain-to-source voltage rating.
  • 3.4A and 2.6A continuous drain current.
  • Surface mount 8-SOIC package.
  • Logic level gate feature included.

SH8M41TB1 Applications

  • Suitable for power switching circuits.
  • Ideal for battery management systems.
  • Used in general purpose power applications.
  • Applicable in compact electronic designs.

SH8M41TB1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SH8M41TB1 MOSFET?

The drain-to-source voltage (Vdss) for the SH8M41TB1 is 80V.

What is the maximum continuous drain current for the SH8M41TB1?

The SH8M41TB1 supports a continuous drain current of 3.4A for the N-channel and 2.6A for the P-channel.

What is the package type for the SH8M41TB1?

The SH8M41TB1 is available in an 8-SOIC (SOP8) package.

What is the operating temperature range of the SH8M41TB1?

The operating temperature for the SH8M41TB1 is up to 150°C (TJ).

Does the SH8M41TB1 have a logic level gate?

Yes, the SH8M41TB1 features a logic level gate.

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