| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SH8M3TB1 is a versatile dual MOSFET featuring both N-channel and P-channel configurations within a single SOP8 package. This device is designed for power switching applications and DC/DC converters.
Key electrical specifications include a 30V drain-source voltage (Vdss) and continuous drain currents of 5A for the N-channel and 4.5A for the P-channel. The static drain-source on-state resistance (Rds(on)) is as low as 51mOhm at 5A and 10V gate-source voltage for the N-channel. The gate threshold voltage (Vgs(th)) is 2.5V at 1mA.
This MOSFET array operates at a maximum channel temperature of 150°C and has a total power dissipation of 2W. It is housed in a compact 8-SOIC surface-mount package, making it suitable for space-constrained designs. The device includes a built-in gate-source protection diode for enhanced reliability.
Applications include power switching circuits and DC/DC converters where efficient and compact power management is required. The logic-level gate feature allows for direct interface with lower voltage control signals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SH8M3TB1 is 30V.
The N-channel offers 5A continuous drain current, and the P-channel offers 4.5A.
The Rds(on) is a maximum of 51mOhm at 5A and 10V for the N-channel.
The SH8M3TB1 is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating temperature range is -55°C to +150°C.