| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,437 pcs
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4437 pcs | On Request | 1 | On Request | On Request | 1209+ | On Request | On Request |
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The ROHM Semiconductor SH8M2TB1 is a versatile MOSFET array featuring both N-channel and P-channel transistors within a single SOP8 package. This configuration is suitable for various power switching applications and DC/DC converters.
Key electrical specifications include a drain-source voltage of 30V and a continuous drain current of 3.5A. The device exhibits a low on-resistance, with a maximum of 83mOhm at 3.5A and 10V Vgs. The gate threshold voltage is typically 1.0V at 1mA, and the input capacitance is 140pF at 10V.
Designed for surface mounting, the SH8M2TB1 comes in an 8-SOP package, measuring 3.90mm in width. It operates at channel temperatures up to 150°C and has a total power dissipation of 2W. The device also includes built-in G-S protection diodes.
This MOSFET array is well-suited for applications requiring efficient power control and conversion, leveraging its dual-channel capability and compact surface-mount design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The SH8M2TB1 comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also referred to as 8-SOP.
The maximum channel temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The maximum continuous drain current is 3.5A.
The maximum on-resistance is 83mOhm at Id=3.5A and Vgs=10V, with a typical value of 59mOhm.
The maximum total gate charge is 3.5nC at Vgs=5V, with a typical value of 0.8nC.
The maximum input capacitance is 140pF at Vds=10V, with a typical value of 2.0nF.