| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,593 pcs
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3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor SH8M24TB1 is a dual MOSFET featuring both N-channel and P-channel configurations within a single SOP8 package. This device is designed for surface mount applications and operates with a maximum drain-source voltage of 45V. It provides continuous current capabilities of 4.5A for one channel and 3.5A for the other, with a maximum on-resistance of 46mOhm at 4.5A and 10V.
The MOSFET utilizes Metal Oxide technology and has a gate threshold voltage of 2.5V at 1mA. Key electrical characteristics include an input capacitance of 550pF at 10V and a gate charge of 9.6nC at 5V. The device is rated for a power dissipation of 2W and can operate at junction temperatures up to 150°C. Its compact 8-SOIC package (0.154", 3.90mm width) makes it suitable for space-constrained designs.
This dual MOSFET is ideal for applications requiring complementary switching capabilities. The surface mount design simplifies integration into printed circuit boards. Its specifications suggest utility in power management, switching circuits, and general-purpose amplification tasks where both N-channel and P-channel devices are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45V.
8-SOIC (0.154", 3.90mm Width) surface mount package, also known as 8-SOP.
150°C.
4.5A for the N-channel and 3.5A for the P-channel.
46mOhm at 4.5A and 10V.
2.5V at 1mA.
2W.