SH8M24TB1 The ROHM Semiconductor SH8M24TB1 is a dual N-channel and P-channel MOSFET in a SOP8 package. It offers a 45V drain-source voltage and continuous current ratings of 4.5A and 3.5A.
Mfr Part #:

SH8M24TB1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SH8M24TB1 is a dual N-channel and P-channel MOSFET in a SOP8 package. It offers a 45V drain-source voltage and continuous current ratings of 4.5A and 3.5A.
✓ Total Stock: 3,593 pcs
$ Price Range: $0.99

SH8M24TB1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,593 pcs
3593 pcs On Request 1 On Request On Request On Request On Request On Request

SH8M24TB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SH8M24TB1 Description

Short technical summary and product information.

The ROHM Semiconductor SH8M24TB1 is a dual MOSFET featuring both N-channel and P-channel configurations within a single SOP8 package. This device is designed for surface mount applications and operates with a maximum drain-source voltage of 45V. It provides continuous current capabilities of 4.5A for one channel and 3.5A for the other, with a maximum on-resistance of 46mOhm at 4.5A and 10V.

 

The MOSFET utilizes Metal Oxide technology and has a gate threshold voltage of 2.5V at 1mA. Key electrical characteristics include an input capacitance of 550pF at 10V and a gate charge of 9.6nC at 5V. The device is rated for a power dissipation of 2W and can operate at junction temperatures up to 150°C. Its compact 8-SOIC package (0.154", 3.90mm width) makes it suitable for space-constrained designs.

 

This dual MOSFET is ideal for applications requiring complementary switching capabilities. The surface mount design simplifies integration into printed circuit boards. Its specifications suggest utility in power management, switching circuits, and general-purpose amplification tasks where both N-channel and P-channel devices are needed.

SH8M24TB1 Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor SH8M24TB1 N-Channel and P-Channel MOSFET
Subcategory: Dual MOSFET

SH8M24TB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SH8M24TB1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SH8M24TB1 Features

  • Dual N-channel and P-channel MOSFET.
  • 45V drain-source voltage rating.
  • 4.5A and 3.5A continuous current.
  • Low 46mOhm on-resistance.
  • Compact 8-SOP surface mount package.

SH8M24TB1 Applications

  • Ideal for complementary switching circuits.
  • Suitable for power management applications.
  • Used in general-purpose amplification.
  • Effective in space-constrained designs.

SH8M24TB1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SH8M24TB1?

45V.

What is the package type of the SH8M24TB1?

8-SOIC (0.154", 3.90mm Width) surface mount package, also known as 8-SOP.

What is the maximum operating junction temperature?

150°C.

What are the continuous drain current ratings for the SH8M24TB1?

4.5A for the N-channel and 3.5A for the P-channel.

What is the maximum on-resistance?

46mOhm at 4.5A and 10V.

What is the maximum gate threshold voltage?

2.5V at 1mA.

What is the maximum power dissipation?

2W.

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