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SH8M13TB The ROHM Semiconductor SH8M13TB is a 2-channel N and P-channel power MOSFET designed for switching applications. It features a 30V breakdown voltage and 6A maximum drain current.
Mfr Part #:

SH8M13TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SH8M13TB is a 2-channel N and P-channel power MOSFET designed for switching applications. It features a 30V breakdown voltage and 6A maximum drain current.
✓ Total Stock: 6,890 pcs
$ Price Range: $0.99

SH8M13TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,890 pcs
On Request
6890 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SH8M13TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SH8M13TB Description

Short technical summary and product information.

The ROHM Semiconductor SH8M13TB is a general-purpose power MOSFET suitable for switching applications. This device features both N-channel and P-channel elements, configured separately with a built-in diode.

 

Key electrical specifications include a minimum breakdown voltage of 30V and a maximum continuous drain current (ID) of 6A. The maximum drain-source on-resistance is rated at 0.049 ohm, and the pulsed drain current (IDM) can reach up to 24A.

 

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and is constructed from silicon. It operates in enhancement mode.

 

The SH8M13TB is provided in a surface-mount SOP-8 package with gull wing terminals. The package body material is plastic/epoxy, and the shape is rectangular.

SH8M13TB Quick Information

Product Type: Power MOSFET
Canonical Name: ROHM Semiconductor SH8M13TB 2 Channel Power MOSFET
Subcategory: Special Purpose

SH8M13TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

SH8M13TB Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SH8M13TB Features

  • 2-channel N and P-channel MOSFET
  • 30V minimum breakdown voltage
  • 6A maximum continuous drain current
  • 0.049 ohm maximum on-resistance
  • Surface mount SOP-8 package

SH8M13TB Applications

  • Suitable for switching power supplies.
  • Used in industrial automation systems.
  • Ideal for motor control applications.
  • Applicable in consumer electronic devices.
  • Suitable for high-speed switching circuits.

SH8M13TB FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the SH8M13TB MOSFET?

The minimum breakdown voltage is 30 V.

What is the maximum continuous drain current for the SH8M13TB?

The maximum continuous drain current (ID) is 6 A.

What is the maximum on-resistance of the SH8M13TB MOSFET?

The maximum drain-source on-resistance is 0.049 ohm.

What type of package is the SH8M13TB MOSFET in?

The SH8M13TB is in a surface mount SOP-8 package.

What FET technology does the SH8M13TB use?

The SH8M13TB uses Metal-Oxide Semiconductor FET technology.

What is the transistor application for the SH8M13TB?

The transistor application is switching.

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