| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,191 pcs
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2191 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Vgs(th) (Max) @ Id |
This ROHM Semiconductor SH8M13GZETB is a dual N and P-channel MOSFET array belonging to the Middle Power MOSFET Series. It is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V, continuous drain current ratings of 6A and 7A, and a maximum on-resistance (Rds On) of 29mOhm at 7A and 10V. The input capacitance (Ciss) is 1200pF at 10V, and the gate charge (Qg) is a maximum of 18nC at 5V. The gate threshold voltage (Vgs(th)) is 2.5V maximum at 1mA.
With an operating temperature range up to 150°C (TJ) and a power dissipation of 2W, this MOSFET array is suitable for various power management tasks. Its configuration of N and P-channel devices makes it versatile for applications requiring complementary switching.
The component is RoHS3 compliant and has an MSL 1 rating, indicating unlimited shelf life under standard conditions. Its surface mount design facilitates integration into compact electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
150°C (TJ).
8-SOIC (0.154", 3.90mm Width) surface mount package.
2.5V maximum at Id=1mA.
29mOhm at Id=7A and Vgs=10V.