SH8K2TB1 The Rohm Semiconductor SH8K2TB1 is a dual N-channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It features low on-resistance and a built-in G-S protection diode.
Mfr Part #:

SH8K2TB1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The Rohm Semiconductor SH8K2TB1 is a dual N-channel MOSFET with a 30V drain-source voltage and 6A continuous drain current. It features low on-resistance and a built-in G-S protection diode.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

SH8K2TB1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 10+ On Request On Request

SH8K2TB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SH8K2TB1 Description

Short technical summary and product information.

The SH8K2TB1 from Rohm Semiconductor is a dual N-channel MOSFET designed for power switching applications and DC/DC converters. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The MOSFET exhibits a low on-resistance, with a maximum of 30mOhm at 6A and 10V gate-source voltage.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V maximum at 1mA, and an input capacitance (Ciss) of 520pF maximum at 10V. The device also features a built-in G-S protection diode for enhanced reliability.

 

Packaged in a small surface-mount SOP8 package, the SH8K2TB1 is suitable for space-constrained designs. It operates at a maximum channel temperature of 150°C and has a total power dissipation of 2W when mounted on a ceramic board. The device is supplied in tape and reel packaging.

 

Applications include power switching and DC/DC converters where efficient and reliable MOSFET performance is required.

SH8K2TB1 Quick Information

Product Type: MOSFET
Canonical Name: SH8K2TB1 Dual N-Channel MOSFET
Subcategory: FETs, MOSFETs - Arrays

SH8K2TB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SH8K2TB1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SH8K2TB1 Features

  • Dual N-channel MOSFET configuration.
  • 30V drain-source voltage rating.
  • 6A continuous drain current capability.
  • Low on-resistance of 30mOhm max.
  • Built-in gate-source protection diode.

SH8K2TB1 Applications

  • Suitable for low-voltage DC-DC converters.
  • Used in load switching applications.
  • Ideal for battery management circuits.
  • Applicable in power management for portable devices.

SH8K2TB1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SH8K2TB1?

The maximum drain-source voltage (Vdss) for the SH8K2TB1 is 30V.

What is the continuous drain current of the SH8K2TB1?

The continuous drain current (Id) for the SH8K2TB1 is 6A at 25°C.

What is the on-resistance of the SH8K2TB1?

The maximum on-resistance (Rds On) for the SH8K2TB1 is 30mOhm at 6A and 10V.

What package type is the SH8K2TB1 supplied in?

The SH8K2TB1 is supplied in an 8-SMD, Gull Wing package, specifically an 8-SOP (5.0x6.0) type.

What is the operating temperature range for the SH8K2TB1?

The operating temperature range for the SH8K2TB1 is -55°C to +150°C.

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