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SH8J66TB1 The ROHM Semiconductor SH8J66TB1 is a dual P-channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 9A.
Mfr Part #:

SH8J66TB1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SH8J66TB1 is a dual P-channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 9A.
✓ Total Stock: 1,122 pcs
$ Price Range: $0.99

SH8J66TB1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,122 pcs
On Request
1122 pcs On Request 1 On Request On Request 1149+ On Request On Request
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SH8J66TB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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SH8J66TB1 Description

Short technical summary and product information.

The SH8J66TB1 from ROHM Semiconductor is a dual P-channel MOSFET housed in an 8-SOP package, suitable for surface mount applications. This device offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current of 9A. Its on-resistance (Rds On) is a maximum of 18.5mOhm at 9A and 10V.

 

The MOSFET operates at temperatures up to 150°C (TJ) and has a power dissipation rating of 2W. Key electrical features include a logic level gate, an input capacitance of 3000pF at 10V, and a gate charge of 35nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.

 

This component is designed with MOSFET (Metal Oxide) technology. The package is an 8-SOIC with a width of 0.154 inches (3.90mm). The mounting type is surface mount, and the supplier device package is 8-SOP.

SH8J66TB1 Quick Information

Product Type: MOSFET
Canonical Name: SH8J66TB1 Dual P-Channel MOSFET
Subcategory: Dual MOSFET

SH8J66TB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SH8J66TB1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SH8J66TB1 Features

  • Dual P-Channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 9A continuous drain current capability.
  • Low 18.5mOhm maximum on-resistance.
  • Surface mount 8-SOP package.

SH8J66TB1 Applications

  • Used in load switching applications.
  • Suitable for power management circuits.
  • Ideal for battery protection systems.
  • Can be used in DC/DC converter designs.

SH8J66TB1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SH8J66TB1?

30V.

What is the continuous drain current rating?

9A.

What is the on-resistance of the SH8J66TB1?

18.5mOhm maximum at 9A and 10V gate drive.

What package is the SH8J66TB1 available in?

8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as 8-SOP.

What is the operating junction temperature range?

Up to 150°C.

Does the SH8J66TB1 have a logic level gate?

Yes, it features a logic level gate.

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