| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | 17+20+22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Tape Width | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SH8J31GZETB is a dual P-channel MOSFET with a drain-source voltage rating of -60V and a continuous drain current of ±4.5A. It offers a low on-resistance with a maximum of 70mΩ at an ID of 4.5A and VGS of -10V.
This MOSFET is housed in a small surface mount 8-SOP package, making it suitable for space-constrained designs. Key electrical characteristics include an input capacitance of 2500pF, output capacitance of 540pF, and reverse transfer capacitance of 140pF. The device operates within a temperature range of -55°C to 150°C.
Features such as Pb-free lead plating and halogen-free construction align with environmental compliance standards. The SH8J31GZETB is designed for applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V
8-SOP (SOIC-8) surface mount
-55°C to 150°C
±4.5A
70mΩ maximum
-1V to -3V