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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Pulsed (Icm) | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SGW30N60 from Infineon Technologies is a single NPT IGBT transistor with a 600V collector-emitter breakdown voltage. It is rated for a continuous collector current of 41A and a maximum power dissipation of 250W.
This IGBT features a saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 30A collector current. Its switching characteristics include a gate charge of 140nC and switching times of 44ns on and 291ns off at 25°C. The switching energy is rated at 640µJ on and 650µJ off.
Designed for through-hole mounting, the SGW30N60 comes in a TO-247-3 package, also referred to as PG-TO247-3-21. It operates within a temperature range of -55°C to 150°C (TJ).
This component is suitable for various industrial automation and power control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
41A continuous, 112A pulsed.
-55°C to 150°C junction temperature.
TO-247-3 (PG-TO247-3-21) with through-hole mounting.
250W maximum.
Turn-on delay 44ns, turn-off delay 291ns at 25°C.
140nC.