DistyParts Icon
SGW30N60 The Infineon Technologies SGW30N60 is a 600V NPT IGBT transistor designed for power applications. It features a 41A collector current and a 250W maximum power rating.
Mfr Part #:

SGW30N60

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SGW30N60 is a 600V NPT IGBT transistor designed for power applications. It features a 41A collector current and a 250W maximum power rating.
✓ Total Stock: 3,600 pcs
$ Price Range: $0.99

SGW30N60 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SGW30N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
View Similar Products (0)

SGW30N60 Description

Short technical summary and product information.

The SGW30N60 from Infineon Technologies is a single NPT IGBT transistor with a 600V collector-emitter breakdown voltage. It is rated for a continuous collector current of 41A and a maximum power dissipation of 250W.

 

This IGBT features a saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 30A collector current. Its switching characteristics include a gate charge of 140nC and switching times of 44ns on and 291ns off at 25°C. The switching energy is rated at 640µJ on and 650µJ off.

 

Designed for through-hole mounting, the SGW30N60 comes in a TO-247-3 package, also referred to as PG-TO247-3-21. It operates within a temperature range of -55°C to 150°C (TJ).

 

This component is suitable for various industrial automation and power control applications where high voltage and current handling are required.

SGW30N60 Quick Information

Product Type: IGBT Transistor
Canonical Name: SGW30N60 IGBT
Subcategory: IGBT

SGW30N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SGW30N60 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SGW30N60 Features

  • 600V collector-emitter breakdown voltage.
  • 41A maximum continuous collector current.
  • 250W maximum power dissipation.
  • 2.4V saturation voltage at 15V/30A.
  • TO-247-3 package for through-hole mounting.

SGW30N60 Applications

  • High-power switching power supplies.
  • Motor drive inverter circuits.
  • Uninterruptible power supplies (UPS).
  • Induction heating applications.
  • Solar inverter systems.

SGW30N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage of SGW30N60?

600V.

What is the maximum collector current rating?

41A continuous, 112A pulsed.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package does SGW30N60 come in?

TO-247-3 (PG-TO247-3-21) with through-hole mounting.

What is the power dissipation?

250W maximum.

What are the switching speeds?

Turn-on delay 44ns, turn-off delay 291ns at 25°C.

What is the gate charge?

140nC.

Home

Categories